silicon planar epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8582 issue 1 page 1 of 3 2N5320 ? low v ce(sat) , h fe 30-130 (@v ce =4v, i c =0.5a) ? hermetic to-39 metal package. ? ideally suited for medium power amplifier and switching applications ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 100v v ceo collector ? emitter voltage 75v v ebo emitter ? base voltage 7v i c continuous collector current 2a i b base current 1.0a p d total power dissipation at t a = 25c 1.0w derate above 25c 5.71mw/c p d total power dissipation at t c = 25c 7w derate above 25c 40mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r ja thermal resistance, junction to ambient 175 c/w r jc thermal resistance, junction to case 25 c/w
silicon planar epitaxial npn transistor 2N5320 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8582 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma i b = 0 75 v v ce = 100v v be = -1.5v 100 a v ce = 70v v be = -1.5v i cex collector cut-off current t a = 150c 5 ma i ebo emitter cut-off current v eb = 7v i c = 0 100 a i c = 500ma v ce = 4v 30 130 h fe (1) forward-current transfer ratio i c = 1.0a v ce = 2v 10 v ce(sat) (1) collector-emitter saturation voltage i c = 500ma i b = 50ma 0.5 v be(on) (1) base-emitter voltage i c = 500ma v ce = 4v 1.1 v dynamic characteristics i c = 50ma v ce = 4v | h fe | small signal forward-current transfer ratio f = 10mhz 5 i c = 500ma v cc = 30v t on turn-on time i b1 = 50ma 80 i c = 500ma v cc = 30v t off turn-off time i b1 = - i b2 = 50ma 800 ns notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial npn transistor 2N5320 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8582 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to - 39 (to - 205ad ) metal package underside view pin 1 - emitter pin 2 - base pin 3 - collector 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045)
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